G1010 MOSFET Transistor

The G1010 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the G1010 transistor as follows.

G1010 Transistor Specification

Transistor Code		G1010
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	100A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	200W
Drain-Source Capacitance		671.5pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		50.8nS

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