FTD04N65C MOSFET Transistor

The FTD04N65C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTD04N65C transistor as follows.

FTD04N65C Transistor Specification

Transistor Code		FTD04N65C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.6Ohm
Power Dissipation (Maximum)	PD	92.5W
Operating Junction Temperature (Maximum)		150°C

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