FTD02N60B MOSFET Transistor

The FTD02N60B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FTD02N60B transistor as follows.

FTD02N60B Transistor Specification

Transistor Code		FTD02N60B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	5.5Ohm
Power Dissipation (Maximum)	PD	43W
Drain-Source Capacitance		19.5pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		19nS

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