FQPF6N90CT MOSFET Transistor

The FQPF6N90CT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF6N90CT transistor as follows.

FQPF6N90CT Transistor Specification

Transistor Code		FQPF6N90CT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.3Ohm
Power Dissipation (Maximum)	PD	56W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		30nC

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