FQPF5P20RDTU MOSFET Transistor

The FQPF5P20RDTU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF5P20RDTU transistor as follows.

FQPF5P20RDTU Transistor Specification

Transistor Code		FQPF5P20RDTU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	38W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V

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