FQPF2N80YDTU MOSFET Transistor

The FQPF2N80YDTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF2N80YDTU transistor as follows.

FQPF2N80YDTU Transistor Specification

Transistor Code		FQPF2N80YDTU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	6.3Ohm
Power Dissipation (Maximum)	PD	35W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V

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