FQPF19N10L MOSFET Transistor

The FQPF19N10L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF19N10L transistor as follows.

FQPF19N10L Transistor Specification

Transistor Code		FQPF19N10L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	13.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		410nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		14nC

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