FQPF12P20YDTU MOSFET Transistor

The FQPF12P20YDTU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF12P20YDTU transistor as follows.

FQPF12P20YDTU Transistor Specification

Transistor Code		FQPF12P20YDTU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.47Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		190pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		195nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		31nC

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