FQPF10N60CT MOSFET Transistor

The FQPF10N60CT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQPF10N60CT transistor as follows.

FQPF10N60CT Transistor Specification

Transistor Code		FQPF10N60CT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.73Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		166pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		69nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		44nC

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