FQN1N60CBU MOSFET Transistor

The FQN1N60CBU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQN1N60CBU transistor as follows.

FQN1N60CBU Transistor Specification

Transistor Code		FQN1N60CBU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-92
Transistor SMD Code		1N60C
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	0.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	11.5Ohm
Power Dissipation (Maximum)	PD	1W
Drain-Source Capacitance		19pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		4.8nC

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