FQD6N25 MOSFET Transistor

The FQD6N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD6N25 transistor as follows.

FQD6N25 Transistor Specification

Transistor Code		FQD6N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	45W
Operating Junction Temperature (Maximum)		150°C

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