FQB50N06L MOSFET Transistor

The FQB50N06L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB50N06L transistor as follows.

FQB50N06L Transistor Specification

Transistor Code		FQB50N06L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	52A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.021Ohm
Power Dissipation (Maximum)	PD	121W
Operating Junction Temperature (Maximum)		175°C
Total Gate Charge		24.5nC

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