FQAF11N90C MOSFET Transistor

The FQAF11N90C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQAF11N90C transistor as follows.

FQAF11N90C Transistor Specification

Transistor Code		FQAF11N90C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO247_TO3P_TO3PF
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	120W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		60nC

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