FQA90N10V2 MOSFET Transistor

The FQA90N10V2 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA90N10V2 transistor as follows.

FQA90N10V2 Transistor Specification

Transistor Code		FQA90N10V2
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	105A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	330W
Drain-Source Capacitance		1180pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		492nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		147nC

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