FQA34N20 MOSFET Transistor

The FQA34N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA34N20 transistor as follows.

FQA34N20 Transistor Specification

Transistor Code		FQA34N20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-3P
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	34A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	210W
Drain-Source Capacitance		430pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		280nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		60nC

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