FQA10N80C_F109 MOSFET Transistor

The FQA10N80C_F109 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQA10N80C_F109 transistor as follows.

FQA10N80C_F109 Transistor Specification

Transistor Code		FQA10N80C_F109
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO3PN
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.1Ohm
Power Dissipation (Maximum)	PD	240W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		45nC

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