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FMV20N50ES MOSFET Transistor

The FMV20N50ES is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FMV20N50ES transistor as follows.

Circuit diagram symbol of the FMV20N50ES transistor

FMV20N50ES Transistor Specification

Transistor Code FMV20N50ES
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220F
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.31Ohm
Power Dissipation (Maximum) PD 95W
Drain-Source Capacitance 250pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 38nS
Gate-Threshold Voltage (Maximum) 4.7V
Total Gate Charge 57nC

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