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FDS6672A MOSFET Transistor

The FDS6672A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6672A transistor as follows.

Circuit diagram symbol of the FDS6672A transistor

FDS6672A Transistor Specification

Transistor Code FDS6672A
Transistor Type MOSFET
Control Channel Type N-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 12.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 2.5W
Drain-Source Capacitance 550pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 18nS
Gate-Threshold Voltage (Maximum) 2V

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