FDS6630A MOSFET Transistor

The FDS6630A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS6630A transistor as follows.

FDS6630A Transistor Specification

Transistor Code		FDS6630A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.038Ohm
Power Dissipation (Maximum)	PD	2.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		5nC

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