FDS4935BZ MOSFET Transistor

The FDS4935BZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS4935BZ transistor as follows.

FDS4935BZ Transistor Specification

Transistor Code		FDS4935BZ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOIC
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	6.9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	1.6W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		29nC

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