FDS3680 MOSFET Transistor

The FDS3680 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDS3680 transistor as follows.

FDS3680 Transistor Specification

Transistor Code		FDS3680
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SO-8
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	5.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.043Ohm
Power Dissipation (Maximum)	PD	2.5W
Drain-Source Capacitance		176pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		8.5nS
Gate-Threshold Voltage (Maximum)		4V

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