FDPF2710T MOSFET Transistor

The FDPF2710T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDPF2710T transistor as follows.

FDPF2710T Transistor Specification

Transistor Code		FDPF2710T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220F
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	25A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0425Ohm
Power Dissipation (Maximum)	PD	62.5W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		78nC

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