FDP8870 MOSFET Transistor

The FDP8870 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP8870 transistor as follows.

FDP8870 Transistor Specification

Transistor Code		FDP8870
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	156A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0041Ohm
Power Dissipation (Maximum)	PD	160W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		106nC

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