FDP083N15A MOSFET Transistor

The FDP083N15A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP083N15A transistor as follows.

FDP083N15A Transistor Specification

Transistor Code		FDP083N15A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	117A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0083Ohm
Power Dissipation (Maximum)	PD	294W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		84nC

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