FDP020N06B_F102 MOSFET Transistor

The FDP020N06B_F102 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDP020N06B_F102 transistor as follows.

FDP020N06B_F102 Transistor Specification

Transistor Code		FDP020N06B_F102
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.002Ohm
Power Dissipation (Maximum)	PD	333W
Drain-Source Capacitance		3840pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		62nS
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		206nC

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