FDMS8570S MOSFET Transistor

The FDMS8570S is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMS8570S transistor as follows.

FDMS8570S Transistor Specification

Transistor Code		FDMS8570S
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PQFN5X6
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	60A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0028Ohm
Power Dissipation (Maximum)	PD	48W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		2.2V
Total Gate Charge		42nC

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