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FDMC8030 MOSFET Transistor

The FDMC8030 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDMC8030 transistor as follows.

Circuit diagram symbol of the FDMC8030 transistor

FDMC8030 Transistor Specification

Transistor Code FDMC8030
Transistor Type MOSFET
Control Channel Type N-Channel
Package MLP3X3
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.01Ohm
Power Dissipation (Maximum) PD 1.9W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 21nC

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