FDD86110 MOSFET Transistor

The FDD86110 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDD86110 transistor as follows.

FDD86110 Transistor Specification

Transistor Code		FDD86110
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0102Ohm
Power Dissipation (Maximum)	PD	127W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		25nC

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