FDC6303N MOSFET Transistor

The FDC6303N is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDC6303N transistor as follows.

FDC6303N Transistor Specification

Transistor Code		FDC6303N
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPERSOT6
Drain-Source Voltage (Maximum)	VDS	25V
Drain Current (Maximum)	ID	0.68A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.45Ohm
Power Dissipation (Maximum)	PD	0.9W
Operating Junction Temperature (Maximum)		150°C

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