FDB024N08BL7 MOSFET Transistor

The FDB024N08BL7 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDB024N08BL7 transistor as follows.

FDB024N08BL7 Transistor Specification

Transistor Code		FDB024N08BL7
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	120A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0024Ohm
Power Dissipation (Maximum)	PD	246W
Operating Junction Temperature (Maximum)		175°C
Gate-Threshold Voltage (Maximum)		4.5V
Total Gate Charge		137nC

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