FCPF150N65FL1 MOSFET Transistor

The FCPF150N65FL1 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCPF150N65FL1 transistor as follows.

FCPF150N65FL1 Transistor Specification

Transistor Code		FCPF150N65FL1
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	24A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.15Ohm
Power Dissipation (Maximum)	PD	39W
Drain-Source Capacitance		91pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		5V

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