FCP104N60 MOSFET Transistor

The FCP104N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FCP104N60 transistor as follows.

FCP104N60 Transistor Specification

Transistor Code		FCP104N60
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	37A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.104Ohm
Power Dissipation (Maximum)	PD	357W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		3.5V

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