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CS6N70A4D-G MOSFET Transistor

The CS6N70A4D-G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CS6N70A4D-G transistor as follows.

Circuit diagram symbol of the CS6N70A4D-G transistor

CS6N70A4D-G Transistor Specification

Transistor Code CS6N70A4D-G
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-252
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.8Ohm
Power Dissipation (Maximum) PD 100W
Drain-Source Capacitance 77pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 21nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 15.5nC

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