CHM1012PAGP MOSFET Transistor

The CHM1012PAGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM1012PAGP transistor as follows.

CHM1012PAGP Transistor Specification

Transistor Code		CHM1012PAGP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DPAK
Drain-Source Voltage (Maximum)	VDS	120V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.12Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		47.5nC

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