CES2309 MOSFET Transistor

The CES2309 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CES2309 transistor as follows.

CES2309 Transistor Specification

Transistor Code		CES2309
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT23
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.165Ohm
Power Dissipation (Maximum)	PD	1.25W
Drain-Source Capacitance		105pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS

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