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CEP01N65 MOSFET Transistor

The CEP01N65 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEP01N65 transistor as follows.

Circuit diagram symbol of the CEP01N65 transistor

CEP01N65 Transistor Specification

Transistor Code CEP01N65
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO220
Drain-Source Voltage (Maximum) VDS 650V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 10.5Ohm
Power Dissipation (Maximum) PD 41W
Drain-Source Capacitance 45pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14.6nS

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