CEB75A3 MOSFET Transistor

The CEB75A3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB75A3 transistor as follows.

CEB75A3 Transistor Specification

Transistor Code		CEB75A3
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	25V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	69A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	68W
Drain-Source Capacitance		280pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		5nS

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