CEB6036 MOSFET Transistor

The CEB6036 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB6036 transistor as follows.

CEB6036 Transistor Specification

Transistor Code		CEB6036
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	135A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0046Ohm
Power Dissipation (Maximum)	PD	167W
Drain-Source Capacitance		450pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23nS
Total Gate Charge		138nC

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