CEB1186 MOSFET Transistor

The CEB1186 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CEB1186 transistor as follows.

CEB1186 Transistor Specification

Transistor Code		CEB1186
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.3Ohm
Power Dissipation (Maximum)	PD	166W
Drain-Source Capacitance		152pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS
Total Gate Charge		29.4nC

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