BUZ50B-220M MOSFET Transistor

The BUZ50B-220M is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUZ50B-220M transistor as follows.

BUZ50B-220M Transistor Specification

Transistor Code		BUZ50B-220M
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO220M
Drain-Source Voltage (Maximum)	VDS	1000V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	10Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		300pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS

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