BSZ900N20NS3G MOSFET Transistor

The BSZ900N20NS3G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSZ900N20NS3G transistor as follows.

BSZ900N20NS3G Transistor Specification

Transistor Code		BSZ900N20NS3G
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		S3O8
Drain-Source Voltage (Maximum)	VDS	200V
Drain Current (Maximum)	ID	15.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.09Ohm
Power Dissipation (Maximum)	PD	62.5W

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