BSS209PW MOSFET Transistor

The BSS209PW is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSS209PW transistor as follows.

BSS209PW Transistor Specification

Transistor Code		BSS209PW
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT323
Transistor SMD Code		X3s
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.58A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.55Ohm
Power Dissipation (Maximum)	PD	0.52W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.2V

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