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BSL211SP MOSFET Transistor

The BSL211SP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSL211SP transistor as follows.

Circuit diagram symbol of the BSL211SP transistor

BSL211SP Transistor Specification

Transistor Code BSL211SP
Transistor Type MOSFET
Control Channel Type P-Channel
Package TSOP6
Transistor SMD Code sPB
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.067Ohm
Power Dissipation (Maximum) PD 2W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1.2V

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