BSL211DV MOSFET Transistor

The BSL211DV is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSL211DV transistor as follows.

BSL211DV Transistor Specification

Transistor Code		BSL211DV
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT163
Transistor SMD Code		sPB
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.067Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		241pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13.9nS

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