BSC750N10NDG MOSFET Transistor

The BSC750N10NDG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSC750N10NDG transistor as follows.

BSC750N10NDG Transistor Specification

Transistor Code		BSC750N10NDG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SUPERSO8
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	13A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	26W

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