BRB80N06 MOSFET Transistor

The BRB80N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BRB80N06 transistor as follows.

BRB80N06 Transistor Specification

Transistor Code		BRB80N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO263
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	84A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.01Ohm
Power Dissipation (Maximum)	PD	84W
Drain-Source Capacitance		540pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		17nS

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