ATP602 MOSFET Transistor

The ATP602 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ATP602 transistor as follows.

ATP602 Transistor Specification

Transistor Code		ATP602
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ATPAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.1Ohm
Power Dissipation (Maximum)	PD	70W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		13.6nC

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