APT5010JN MOSFET Transistor

The APT5010JN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APT5010JN transistor as follows.

APT5010JN Transistor Specification

Transistor Code		APT5010JN
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT227
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	48A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	520W
Drain-Source Capacitance		1170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Total Gate Charge		240nC

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