APQ65SN06AH MOSFET Transistor

The APQ65SN06AH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ65SN06AH transistor as follows.

APQ65SN06AH Transistor Specification

Transistor Code		APQ65SN06AH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	65A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.016Ohm
Power Dissipation (Maximum)	PD	135W
Drain-Source Capacitance		449pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32.4nS
Gate-Threshold Voltage (Maximum)		4V

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