APQ10SN40AH MOSFET Transistor

The APQ10SN40AH is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the APQ10SN40AH transistor as follows.

APQ10SN40AH Transistor Specification

Transistor Code		APQ10SN40AH
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.55Ohm
Power Dissipation (Maximum)	PD	134W
Drain-Source Capacitance		330pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		27nS
Gate-Threshold Voltage (Maximum)		4V

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